BSC0910NDIATMA1 - MOSFET 2N-CH 25V 16A/31A TISON8

Manufacturer Bilang Bahagi

BSC0910NDIATMA1

Internal Bilang Bahagi

ABC-BSC0910NDIATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET 2N-CH 25V 16A/31A TISON8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

671944 Pieces

reference Presyo

~~USD 0.48713~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung BSC0910NDIATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSC0910NDIATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSC0910NDIATMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET 2N-CH 25V 16A/31A TISON8

serye : OptiMOS™

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual) Asymmetrical

Tampok ng FET : Logic Level Gate, 4.5V Drive

Drain sa Source Voltage (Vdss) : 25V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11A, 31A

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 6.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : 4500pF @ 12V

Kapangyarihan - Max : 1W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerTDFN

Package ng Tagabigay ng Device : PG-TISON-8

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSC09 , BSC0910

Mga dokumento para sa BSC0910NDIATMA1

datasheets : BSC0910NDIATMA1.pdf

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