CSD17579Q3A - MOSFET N-CH 30V 35A 8VSON

Manufacturer Bilang Bahagi

CSD17579Q3A

Internal Bilang Bahagi

ABC-CSD17579Q3A

tagagawa

T-I

Maikling Paglalarawan

MOSFET N-CH 30V 35A 8VSON

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

2802429 Pieces

reference Presyo

~~USD 0.1168~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung CSD17579Q3A sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa CSD17579Q3A

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : CSD17579Q3A

tagagawa : T-I

paglalarawan : MOSFET N-CH 30V 35A 8VSON

serye : NexFET™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 20A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10.2 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 998pF @ 15V

Tampok ng FET : -

Power Dissipation (Max) : 3.2W (Ta), 29W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-VSONP (3x3.15)

Pakete / Kaso : 8-PowerVDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : CSD , CSD17

Mga dokumento para sa CSD17579Q3A

datasheets : CSD17579Q3A.pdf

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