LSIC1MO120E0160 - SIC MOSFET 1200V 22A TO247-3

Manufacturer Bilang Bahagi

LSIC1MO120E0160

Internal Bilang Bahagi

ABC-LSIC1MO120E0160

tagagawa

Littelfuse Inc.

Maikling Paglalarawan

SIC MOSFET 1200V 22A TO247-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

76509 Pieces

reference Presyo

~~USD 5.5~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung LSIC1MO120E0160 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa LSIC1MO120E0160

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : LSIC1MO120E0160

tagagawa : Littelfuse Inc.

paglalarawan : SIC MOSFET 1200V 22A TO247-3

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 22A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 20V

Rds On (Max) @ Id, Vgs : 200 mOhm @ 10A, 20V

Vgs (th) (Max) @ Id : 4V @ 5mA

Gate Charge (Qg) (Max) @ Vgs : 57nC @ 20V

Vgs (Max) : +22V, -6V

Input Capacitance (Ciss) (Max) @ Vds : 870pF @ 800V

Tampok ng FET : -

Power Dissipation (Max) : 125W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-247-3

Pakete / Kaso : TO-247-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : LSIC1 , LSIC1MO

Mga dokumento para sa LSIC1MO120E0160

datasheets : LSIC1MO120E0160.pdf

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