CSD23202W10 - MOSFET P-CH 12V 2.2A 4DSBGA

Manufacturer Bilang Bahagi

CSD23202W10

Internal Bilang Bahagi

ABC-CSD23202W10

tagagawa

T-I

Maikling Paglalarawan

MOSFET P-CH 12V 2.2A 4DSBGA

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

4447338 Pieces

reference Presyo

~~USD 0.0736~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung CSD23202W10 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa CSD23202W10

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : CSD23202W10

tagagawa : T-I

paglalarawan : MOSFET P-CH 12V 2.2A 4DSBGA

serye : NexFET™

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 12V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.2A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 53 mOhm @ 500mA, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 3.8nC @ 4.5V

Vgs (Max) : -6V

Input Capacitance (Ciss) (Max) @ Vds : 512pF @ 6V

Tampok ng FET : -

Power Dissipation (Max) : 1W (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 4-DSBGA (1x1)

Pakete / Kaso : 4-UFBGA, DSBGA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : CSD , CSD23

Mga dokumento para sa CSD23202W10

datasheets : CSD23202W10.pdf

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