TPH2900ENH,L1Q - MOSFET N-CH 200V 33A SOP8

Manufacturer Bilang Bahagi

TPH2900ENH,L1Q

Internal Bilang Bahagi

ABC-TPH2900ENH,L1Q

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET N-CH 200V 33A SOP8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

616882 Pieces

reference Presyo

~~USD 0.5306~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung TPH2900ENH,L1Q sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TPH2900ENH,L1Q

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TPH2900ENH,L1Q

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET N-CH 200V 33A SOP8

serye : U-MOSVIII-H

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 33A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 29 mOhm @ 16.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 100V

Tampok ng FET : -

Power Dissipation (Max) : 78W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-SOP Advance (5x5)

Pakete / Kaso : 8-PowerVDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TPH2 , TPH2900

Mga dokumento para sa TPH2900ENH,L1Q

datasheets : TPH2900ENH,L1Q.pdf

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