2N6661JTX02 - MOSFET N-CH 90V 0.86A TO-205

Manufacturer Bilang Bahagi

2N6661JTX02

Internal Bilang Bahagi

ABC-2N6661JTX02

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N-CH 90V 0.86A TO-205

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

79680 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung 2N6661JTX02 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa 2N6661JTX02

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : 2N6661JTX02

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N-CH 90V 0.86A TO-205

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 90V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 860mA (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V

Vgs (th) (Max) @ Id : 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-39

Pakete / Kaso : TO-205AD, TO-39-3 Metal Can

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : 2N6 , 2N666

Mga dokumento para sa 2N6661JTX02

datasheets : 2N6661JTX02.pdf

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