2N7635-GA - TRANS SJT 650V 4A TO-257

Manufacturer Bilang Bahagi

2N7635-GA

Internal Bilang Bahagi

ABC-2N7635-GA

tagagawa

GeneSiC Semiconductor

Maikling Paglalarawan

TRANS SJT 650V 4A TO-257

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

78525 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung 2N7635-GA sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa 2N7635-GA

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : 2N7635-GA

tagagawa : GeneSiC Semiconductor

paglalarawan : TRANS SJT 650V 4A TO-257

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : -

Teknolohiya : SiC (Silicon Carbide Junction Transistor)

Drain sa Source Voltage (Vdss) : 650V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Tc) (165°C)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V

Tampok ng FET : -

Power Dissipation (Max) : 47W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 225°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-257

Pakete / Kaso : TO-257-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : 2N7 , 2N76

Mga dokumento para sa 2N7635-GA

datasheets : 2N7635-GA.pdf

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