TPS1101DRG4 - MOSFET P-CH 15V 2.3A 8-SOIC

Manufacturer Bilang Bahagi

TPS1101DRG4

Internal Bilang Bahagi

ABC-TPS1101DRG4

tagagawa

T-I

Maikling Paglalarawan

MOSFET P-CH 15V 2.3A 8-SOIC

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

674751 Pieces

reference Presyo

~~USD 0.4851~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung TPS1101DRG4 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TPS1101DRG4

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TPS1101DRG4

tagagawa : T-I

paglalarawan : MOSFET P-CH 15V 2.3A 8-SOIC

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 15V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.3A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.7V, 10V

Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 11.25nC @ 10V

Vgs (Max) : +2V, -15V

Input Capacitance (Ciss) (Max) @ Vds : -

Tampok ng FET : -

Power Dissipation (Max) : 791mW (Ta)

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-SOIC

Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TPS , TPS11

Mga dokumento para sa TPS1101DRG4

datasheets : TPS1101DRG4.pdf

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