PMXB360ENEAZ - MOSFET N-CH 80V 1.1A 3DFN

Manufacturer Bilang Bahagi

PMXB360ENEAZ

Internal Bilang Bahagi

ABC-PMXB360ENEAZ

tagagawa

Nexperia USA Inc.

Maikling Paglalarawan

MOSFET N-CH 80V 1.1A 3DFN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

5151468 Pieces

reference Presyo

~~USD 0.06354~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung PMXB360ENEAZ sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa PMXB360ENEAZ

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : PMXB360ENEAZ

tagagawa : Nexperia USA Inc.

paglalarawan : MOSFET N-CH 80V 1.1A 3DFN

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 80V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.1A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 450 mOhm @ 1.1A, 10V

Vgs (th) (Max) @ Id : 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 130pF @ 40V

Tampok ng FET : -

Power Dissipation (Max) : 400mW (Ta), 6.25W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : DFN1010D-3

Pakete / Kaso : 3-XDFN Exposed Pad

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : PMXB , PMXB36

Mga dokumento para sa PMXB360ENEAZ

datasheets : PMXB360ENEAZ.pdf

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