DMJ70H1D3SJ3 - MOSFET N-CH TO251

Manufacturer Bilang Bahagi

DMJ70H1D3SJ3

Internal Bilang Bahagi

ABC-DMJ70H1D3SJ3

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET N-CH TO251

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

688233 Pieces

reference Presyo

~~USD 0.4756~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung DMJ70H1D3SJ3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMJ70H1D3SJ3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMJ70H1D3SJ3

tagagawa : Diodes Incorporated

paglalarawan : MOSFET N-CH TO251

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 700V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.6A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : 1.3 Ohm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 13.9nC @ 10V

Vgs (Max) : -

Input Capacitance (Ciss) (Max) @ Vds : 351pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 41W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 155°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-251

Pakete / Kaso : TO-251-3 Short Leads, IPak, TO-251AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMJ7 , DMJ70H

Mga dokumento para sa DMJ70H1D3SJ3

datasheets : DMJ70H1D3SJ3.pdf

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