STD110N02RT4G - MOSFET N-CH 24V 32A DPAK

Manufacturer Bilang Bahagi

STD110N02RT4G

Internal Bilang Bahagi

ABC-STD110N02RT4G

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET N-CH 24V 32A DPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

43355 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung STD110N02RT4G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa STD110N02RT4G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : STD110N02RT4G

tagagawa : ON Semiconductor

paglalarawan : MOSFET N-CH 24V 32A DPAK

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 24V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 32A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 28nC @ 4.5V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3440pF @ 20V

Tampok ng FET : -

Power Dissipation (Max) : 1.5W (Ta), 110W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : DPAK

Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : STD1 , STD110

Mga dokumento para sa STD110N02RT4G

datasheets : STD110N02RT4G.pdf

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