FDP8D5N10C - FET ENGR DEV-NOT REL

Manufacturer Bilang Bahagi

FDP8D5N10C

Internal Bilang Bahagi

ABC-FDP8D5N10C

tagagawa

ON Semiconductor

Maikling Paglalarawan

FET ENGR DEV-NOT REL

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

279020 Pieces

reference Presyo

~~USD 1.17307~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung FDP8D5N10C sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa FDP8D5N10C

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : FDP8D5N10C

tagagawa : ON Semiconductor

paglalarawan : FET ENGR DEV-NOT REL

serye : PowerTrench®

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 76A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 76A, 10V

Vgs (th) (Max) @ Id : 4V @ 130µA

Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2475pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 2.4W (Ta), 107W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220-3

Pakete / Kaso : TO-220-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : FDP , FDP8D

Mga dokumento para sa FDP8D5N10C

datasheets : FDP8D5N10C.pdf

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