TPC8212-H(TE12LQ,M - MOSFET 2N-CH 30V 6A SOP8

Manufacturer Bilang Bahagi

TPC8212-H(TE12LQ,M

Internal Bilang Bahagi

ABC-TPC8212-H(TE12LQ,M

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET 2N-CH 30V 6A SOP8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

50778 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung TPC8212-H(TE12LQ,M sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TPC8212-H(TE12LQ,M

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TPC8212-H(TE12LQ,M

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET 2N-CH 30V 6A SOP8

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6A

Rds On (Max) @ Id, Vgs : 21 mOhm @ 3A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 840pF @ 10V

Kapangyarihan - Max : 450mW

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-SOIC (0.173", 4.40mm Width)

Package ng Tagabigay ng Device : 8-SOP (5.5x6.0)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TPC821 , TPC8212-H

Mga dokumento para sa TPC8212-H(TE12LQ,M

datasheets : TPC8212-H(TE12LQ,M.pdf

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