C3M0075120D - MOSFET 1200V 75 MOHM G3 SIC

Manufacturer Bilang Bahagi

C3M0075120D

Internal Bilang Bahagi

ABC-C3M0075120D

tagagawa

Cree/Wolfspeed

Maikling Paglalarawan

MOSFET 1200V 75 MOHM G3 SIC

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

50531 Pieces

reference Presyo

~~USD 12.025~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung C3M0075120D sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa C3M0075120D

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : C3M0075120D

tagagawa : Cree/Wolfspeed

paglalarawan : MOSFET 1200V 75 MOHM G3 SIC

serye : C3M™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 30A

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 15V

Rds On (Max) @ Id, Vgs : 90 mOhm @ 20A, 15V

Vgs (th) (Max) @ Id : 4V @ 5mA

Gate Charge (Qg) (Max) @ Vgs : 54nC @ 15V

Vgs (Max) : +19V, -8V

Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 1000V

Tampok ng FET : -

Power Dissipation (Max) : 113.6W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-247-3

Pakete / Kaso : TO-247-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : C3M , C3M00

Mga dokumento para sa C3M0075120D

datasheets : C3M0075120D.pdf

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