EPC2012 - GANFET TRANS 200V 3A BUMPED DIE

Manufacturer Bilang Bahagi

EPC2012

Internal Bilang Bahagi

ABC-EPC2012

tagagawa

EPC

Maikling Paglalarawan

GANFET TRANS 200V 3A BUMPED DIE

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

40288 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung EPC2012 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa EPC2012

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : EPC2012

tagagawa : EPC

paglalarawan : GANFET TRANS 200V 3A BUMPED DIE

serye : eGaN®

Katayuan ng Bahagi : Discontinued at Digi-Key

Uri ng FET : N-Channel

Teknolohiya : GaNFET (Gallium Nitride)

Drain sa Source Voltage (Vdss) : 200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 5V

Vgs (Max) : +6V, -5V

Input Capacitance (Ciss) (Max) @ Vds : 145pF @ 100V

Tampok ng FET : -

Power Dissipation (Max) : -

Temperatura ng pagpapatakbo : -40°C ~ 125°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : Die

Pakete / Kaso : Die

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : EP , EPC

Mga dokumento para sa EPC2012

datasheets : EPC2012.pdf

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