TK31J60W,S1VQ - MOSFET N CH 600V 30.8A TO-3PN

Manufacturer Bilang Bahagi

TK31J60W,S1VQ

Internal Bilang Bahagi

ABC-TK31J60W,S1VQ

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET N CH 600V 30.8A TO-3PN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

88536 Pieces

reference Presyo

~~USD 4.225~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung TK31J60W,S1VQ sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TK31J60W,S1VQ

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TK31J60W,S1VQ

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET N CH 600V 30.8A TO-3PN

serye : DTMOSIV

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 600V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 30.8A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 300V

Tampok ng FET : Super Junction

Power Dissipation (Max) : 230W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-3P(N)

Pakete / Kaso : TO-3P-3, SC-65-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TK31 , TK31J6

Mga dokumento para sa TK31J60W,S1VQ

datasheets : TK31J60W,S1VQ.pdf

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