CSD19536KTTT - MOSFET N-CH 100V 200A TO263

Manufacturer Bilang Bahagi

CSD19536KTTT

Internal Bilang Bahagi

ABC-CSD19536KTTT

tagagawa

T-I

Maikling Paglalarawan

MOSFET N-CH 100V 200A TO263

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

170752 Pieces

reference Presyo

~~USD 2.1907~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung CSD19536KTTT sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa CSD19536KTTT

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : CSD19536KTTT

tagagawa : T-I

paglalarawan : MOSFET N-CH 100V 200A TO263

serye : NexFET™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 200A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 153nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 12000pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 375W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : DDPAK/TO-263-3

Pakete / Kaso : TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : CSD1 , CSD195

Mga dokumento para sa CSD19536KTTT

datasheets : CSD19536KTTT.pdf

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