SIHB12N60E-GE3 - MOSFET N-CH 600V 12A TO263

Manufacturer Bilang Bahagi

SIHB12N60E-GE3

Internal Bilang Bahagi

ABC-SIHB12N60E-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N-CH 600V 12A TO263

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

287126 Pieces

reference Presyo

~~USD 1.14~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SIHB12N60E-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SIHB12N60E-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SIHB12N60E-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N-CH 600V 12A TO263

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 600V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 380 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 937pF @ 100V

Tampok ng FET : -

Power Dissipation (Max) : 147W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : D2PAK

Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SIHB , SIHB12N

Mga dokumento para sa SIHB12N60E-GE3

datasheets : SIHB12N60E-GE3.pdf

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