BUK9E1R6-30E,127 - MOSFET N-CH 30V 120A I2PAK

Manufacturer Bilang Bahagi

BUK9E1R6-30E,127

Internal Bilang Bahagi

ABC-BUK9E1R6-30E,127

tagagawa

NXP USA Inc.

Maikling Paglalarawan

MOSFET N-CH 30V 120A I2PAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

45955 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung BUK9E1R6-30E,127 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BUK9E1R6-30E,127

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BUK9E1R6-30E,127

tagagawa : NXP USA Inc.

paglalarawan : MOSFET N-CH 30V 120A I2PAK

serye : TrenchMOS™

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 1.4 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 113nC @ 5V

Vgs (Max) : ±10V

Input Capacitance (Ciss) (Max) @ Vds : 16150pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 349W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : I2PAK

Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BUK9E , BUK9E1R6

Mga dokumento para sa BUK9E1R6-30E,127

datasheets : BUK9E1R6-30E,127.pdf

Kaugnay na mga produkto para sa BUK9E1R6-30E,127 NXP USA Inc.

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