SIHP11N80E-GE3 - MOSFET N-CH 800V 12A TO220AB

Manufacturer Bilang Bahagi

SIHP11N80E-GE3

Internal Bilang Bahagi

ABC-SIHP11N80E-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N-CH 800V 12A TO220AB

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

191344 Pieces

reference Presyo

~~USD 1.955~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SIHP11N80E-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SIHP11N80E-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SIHP11N80E-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N-CH 800V 12A TO220AB

serye : E

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 800V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 440 mOhm @ 5.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 88nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 1670pF @ 100V

Tampok ng FET : -

Power Dissipation (Max) : 179W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-220AB

Pakete / Kaso : TO-220-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SIHP , SIHP11N

Mga dokumento para sa SIHP11N80E-GE3

datasheets : SIHP11N80E-GE3.pdf

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