TN2510N8-G - MOSFET N-CH 100V 730MA SOT89-3

Manufacturer Bilang Bahagi

TN2510N8-G

Internal Bilang Bahagi

ABC-TN2510N8-G

tagagawa

Microchip Technology

Maikling Paglalarawan

MOSFET N-CH 100V 730MA SOT89-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

836290 Pieces

reference Presyo

~~USD 0.3914~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung TN2510N8-G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TN2510N8-G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TN2510N8-G

tagagawa : Microchip Technology

paglalarawan : MOSFET N-CH 100V 730MA SOT89-3

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 730mA (Tj)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 3V, 10V

Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 750mA, 10V

Vgs (th) (Max) @ Id : 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 125pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 1.6W (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : TO-243AA (SOT-89)

Pakete / Kaso : TO-243AA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TN2 , TN251

Mga dokumento para sa TN2510N8-G

datasheets : TN2510N8-G.pdf

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