TK60S06K3L(T6L1,NQ - MOSFET N-CH 60V 60A DPAK-3

Manufacturer Bilang Bahagi

TK60S06K3L(T6L1,NQ

Internal Bilang Bahagi

ABC-TK60S06K3L(T6L1,NQ

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET N-CH 60V 60A DPAK-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

899241 Pieces

reference Presyo

~~USD 0.364~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung TK60S06K3L(T6L1,NQ sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TK60S06K3L(T6L1,NQ

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TK60S06K3L(T6L1,NQ

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET N-CH 60V 60A DPAK-3

serye : U-MOSIV

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 60A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2900pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 88W (Tc)

Temperatura ng pagpapatakbo : 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : DPAK+

Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TK60S0 , TK60S06K3

Mga dokumento para sa TK60S06K3L(T6L1,NQ

datasheets : TK60S06K3L(T6L1,NQ.pdf

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