SQJ912BEP-T1_GE3 - MOSFET N-CH DUAL 40V PPSO-8L

Manufacturer Bilang Bahagi

SQJ912BEP-T1_GE3

Internal Bilang Bahagi

ABC-SQJ912BEP-T1_GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N-CH DUAL 40V PPSO-8L

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1069313 Pieces

reference Presyo

~~USD 0.306105~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SQJ912BEP-T1_GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SQJ912BEP-T1_GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SQJ912BEP-T1_GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N-CH DUAL 40V PPSO-8L

serye : Automotive, AEC-Q101, TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 40V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 30A (Tc)

Rds On (Max) @ Id, Vgs : 11 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 25V

Kapangyarihan - Max : 48W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : PowerPAK® SO-8 Dual

Package ng Tagabigay ng Device : PowerPAK® SO-8 Dual

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SQJ91 , SQJ912BE

Mga dokumento para sa SQJ912BEP-T1_GE3

datasheets : SQJ912BEP-T1_GE3.pdf

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