SSM6J215FE(TE85L,F - MOSFET P CH 20V 3.4A ES6

Manufacturer Bilang Bahagi

SSM6J215FE(TE85L,F

Internal Bilang Bahagi

ABC-SSM6J215FE(TE85L,F

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET P CH 20V 3.4A ES6

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

4223541 Pieces

reference Presyo

~~USD 0.0775~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SSM6J215FE(TE85L,F sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SSM6J215FE(TE85L,F

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SSM6J215FE(TE85L,F

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET P CH 20V 3.4A ES6

serye : U-MOSVI

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3.4A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 59 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 10.4nC @ 4.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 630pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 500mW (Ta)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : ES6

Pakete / Kaso : SOT-563, SOT-666

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SSM6J2 , SSM6J215F

Mga dokumento para sa SSM6J215FE(TE85L,F

datasheets : SSM6J215FE(TE85L,F.pdf

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