STS9P2UH7 - MOSFET P-CH 20V 9A 8-SOIC

Manufacturer Bilang Bahagi

STS9P2UH7

Internal Bilang Bahagi

ABC-STS9P2UH7

tagagawa

STMicroelectronics

Maikling Paglalarawan

MOSFET P-CH 20V 9A 8-SOIC

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

99472 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung STS9P2UH7 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa STS9P2UH7

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : STS9P2UH7

tagagawa : STMicroelectronics

paglalarawan : MOSFET P-CH 20V 9A 8-SOIC

serye : STripFET™

Katayuan ng Bahagi : Obsolete

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 22.5 mOhm @ 4.5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 22nC @ 4.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 2390pF @ 16V

Tampok ng FET : -

Power Dissipation (Max) : 2.7W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-SO

Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : STS , STS9

Mga dokumento para sa STS9P2UH7

datasheets : STS9P2UH7.pdf

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