IXFH12N100F - MOSFET N-CH 1000V 12A TO-247AD

Manufacturer Bilang Bahagi

IXFH12N100F

Internal Bilang Bahagi

ABC-IXFH12N100F

tagagawa

IXYS-RF

Maikling Paglalarawan

MOSFET N-CH 1000V 12A TO-247AD

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

82368 Pieces

reference Presyo

~~USD 4.540835~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung IXFH12N100F sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IXFH12N100F

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IXFH12N100F

tagagawa : IXYS-RF

paglalarawan : MOSFET N-CH 1000V 12A TO-247AD

serye : HiPerRF™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 1000V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V

Vgs (th) (Max) @ Id : 5.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 300W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-247AD (IXFH)

Pakete / Kaso : TO-3P-3 Full Pack

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IXF , IXFH1

Mga dokumento para sa IXFH12N100F

datasheets : IXFH12N100F.pdf

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