SI8429DB-T1-E1 - MOSFET P-CH 8V 11.7A 2X2 4-MFP

Manufacturer Bilang Bahagi

SI8429DB-T1-E1

Internal Bilang Bahagi

ABC-SI8429DB-T1-E1

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET P-CH 8V 11.7A 2X2 4-MFP

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1416982 Pieces

reference Presyo

~~USD 0.231~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SI8429DB-T1-E1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI8429DB-T1-E1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI8429DB-T1-E1

tagagawa : Vishay Siliconix

paglalarawan : MOSFET P-CH 8V 11.7A 2X2 4-MFP

serye : TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 8V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11.7A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.2V, 4.5V

Rds On (Max) @ Id, Vgs : 35 mOhm @ 1A, 4.5V

Vgs (th) (Max) @ Id : 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 26nC @ 5V

Vgs (Max) : ±5V

Input Capacitance (Ciss) (Max) @ Vds : 1640pF @ 4V

Tampok ng FET : -

Power Dissipation (Max) : 2.77W (Ta), 6.25W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 4-Microfoot

Pakete / Kaso : 4-XFBGA, CSPBGA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI84 , SI8429D

Mga dokumento para sa SI8429DB-T1-E1

datasheets : SI8429DB-T1-E1.pdf

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