SI4900DY-T1-E3 - MOSFET 2N-CH 60V 5.3A 8-SOIC

Manufacturer Bilang Bahagi

SI4900DY-T1-E3

Internal Bilang Bahagi

ABC-SI4900DY-T1-E3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET 2N-CH 60V 5.3A 8-SOIC

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1180816 Pieces

reference Presyo

~~USD 0.2772~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SI4900DY-T1-E3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI4900DY-T1-E3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI4900DY-T1-E3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET 2N-CH 60V 5.3A 8-SOIC

serye : TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5.3A

Rds On (Max) @ Id, Vgs : 58 mOhm @ 4.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 665pF @ 15V

Kapangyarihan - Max : 3.1W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

Package ng Tagabigay ng Device : 8-SO

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI49 , SI4900D

Mga dokumento para sa SI4900DY-T1-E3

datasheets : SI4900DY-T1-E3.pdf

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