JAN1N5809US - DIODE GEN PURP 100V 6A B-MELF

Manufacturer Bilang Bahagi

JAN1N5809US

Internal Bilang Bahagi

ABC-JAN1N5809US

tagagawa

Microsemi Corporation

Maikling Paglalarawan

DIODE GEN PURP 100V 6A B-MELF

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

79938 Pieces

reference Presyo

~~USD 5.26405~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung JAN1N5809US sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa JAN1N5809US

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : JAN1N5809US

tagagawa : Microsemi Corporation

paglalarawan : DIODE GEN PURP 100V 6A B-MELF

serye : Military, MIL-PRF-19500/477

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 100V

Kasalukuyang - Average na Rectified (Io) : 6A

Boltahe - Ipasa (Vf) (Max) @ Kung : 875mV @ 4A

Bilis : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 30ns

Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 100V

Capacitance @ Vr, F : 60pF @ 10V, 1MHz

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : SQ-MELF, B

Package ng Tagabigay ng Device : B, SQ-MELF

Operating temperatura - Junction : -65°C ~ 175°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : JAN , JAN1N

Mga dokumento para sa JAN1N5809US

datasheets : JAN1N5809US.pdf

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