SI8472DB-T2-E1 - MOSFET N-CH 20V 3.3A MICRO

Manufacturer Bilang Bahagi

SI8472DB-T2-E1

Internal Bilang Bahagi

ABC-SI8472DB-T2-E1

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N-CH 20V 3.3A MICRO

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

2972830 Pieces

reference Presyo

~~USD 0.110105~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SI8472DB-T2-E1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI8472DB-T2-E1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI8472DB-T2-E1

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N-CH 20V 3.3A MICRO

serye : TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : -

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 44 mOhm @ 1.5A, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 18nC @ 8V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 630pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 780mW (Ta), 1.8W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 4-Micro Foot (1x1)

Pakete / Kaso : 4-UFBGA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI84 , SI8472D

Mga dokumento para sa SI8472DB-T2-E1

datasheets : SI8472DB-T2-E1.pdf

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