SCTH90N65G2V-7 - SILICON CARBIDE POWER MOSFET 650

Manufacturer Bilang Bahagi

SCTH90N65G2V-7

Internal Bilang Bahagi

ABC-SCTH90N65G2V-7

tagagawa

STMicroelectronics

Maikling Paglalarawan

SILICON CARBIDE POWER MOSFET 650

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

63456 Pieces

reference Presyo

~~USD 23.5705~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SCTH90N65G2V-7 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SCTH90N65G2V-7

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SCTH90N65G2V-7

tagagawa : STMicroelectronics

paglalarawan : SILICON CARBIDE POWER MOSFET 650

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : SiCFET (Silicon Carbide)

Drain sa Source Voltage (Vdss) : 650V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 90A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 18V

Rds On (Max) @ Id, Vgs : 26 mOhm @ 50A, 18V

Vgs (th) (Max) @ Id : 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 157nC @ 18V

Vgs (Max) : +22V, -10V

Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 400V

Tampok ng FET : -

Power Dissipation (Max) : 330W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : H2PAK-7

Pakete / Kaso : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SCTH , SCTH90N

Mga dokumento para sa SCTH90N65G2V-7

datasheets : SCTH90N65G2V-7.pdf

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