SIZ322DT-T1-GE3 - MOSFET 2 N-CH 25V 30A 8-POWER33

Manufacturer Bilang Bahagi

SIZ322DT-T1-GE3

Internal Bilang Bahagi

ABC-SIZ322DT-T1-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET 2 N-CH 25V 30A 8-POWER33

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1767598 Pieces

reference Presyo

~~USD 0.18518~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SIZ322DT-T1-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SIZ322DT-T1-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SIZ322DT-T1-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET 2 N-CH 25V 30A 8-POWER33

serye : TrenchFET® Gen IV

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 25V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 30A (Tc)

Rds On (Max) @ Id, Vgs : 6.35 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 20.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 12.5V

Kapangyarihan - Max : 16.7W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-PowerWDFN

Package ng Tagabigay ng Device : 8-Power33 (3x3)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SIZ32 , SIZ322D

Mga dokumento para sa SIZ322DT-T1-GE3

datasheets : SIZ322DT-T1-GE3.pdf

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