IXFN82N60Q3 - MOSFET N-CH 600V 66A SOT-227

Manufacturer Bilang Bahagi

IXFN82N60Q3

Internal Bilang Bahagi

ABC-IXFN82N60Q3

tagagawa

IXYS

Maikling Paglalarawan

MOSFET N-CH 600V 66A SOT-227

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

69280 Pieces

reference Presyo

~~USD 21.58~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung IXFN82N60Q3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IXFN82N60Q3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IXFN82N60Q3

tagagawa : IXYS

paglalarawan : MOSFET N-CH 600V 66A SOT-227

serye : HiPerFET™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 600V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 66A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 75 mOhm @ 41A, 10V

Vgs (th) (Max) @ Id : 6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs : 275nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 13500pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 960W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Chassis Mount

Package ng Tagabigay ng Device : SOT-227B

Pakete / Kaso : SOT-227-4, miniBLOC

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IXF , IXFN8

Mga dokumento para sa IXFN82N60Q3

datasheets : IXFN82N60Q3.pdf

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