HAT2131R-EL-E - MOSFET N-CH 8SO

Manufacturer Bilang Bahagi

HAT2131R-EL-E

Internal Bilang Bahagi

ABC-HAT2131R-EL-E

tagagawa

Renesas Electronics America

Maikling Paglalarawan

MOSFET N-CH 8SO

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

86912 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung HAT2131R-EL-E sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa HAT2131R-EL-E

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : HAT2131R-EL-E

tagagawa : Renesas Electronics America

paglalarawan : MOSFET N-CH 8SO

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 350V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 900mA (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4V, 10V

Rds On (Max) @ Id, Vgs : 3 Ohm @ 450mA, 10V

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 460pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 2.5W (Ta)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 8-SOP

Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : HAT2 , HAT213

Mga dokumento para sa HAT2131R-EL-E

datasheets : HAT2131R-EL-E.pdf

Kaugnay na mga produkto para sa HAT2131R-EL-E Renesas Electronics America

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