LND150N3-G-P002 - MOSFET N-CH 500V 30MA TO92-3

Manufacturer Bilang Bahagi

LND150N3-G-P002

Internal Bilang Bahagi

ABC-LND150N3-G-P002

tagagawa

Microchip Technology

Maikling Paglalarawan

MOSFET N-CH 500V 30MA TO92-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1672580 Pieces

reference Presyo

~~USD 0.1957~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung LND150N3-G-P002 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa LND150N3-G-P002

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : LND150N3-G-P002

tagagawa : Microchip Technology

paglalarawan : MOSFET N-CH 500V 30MA TO92-3

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 500V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 30mA (Tj)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 0V

Rds On (Max) @ Id, Vgs : 1000 Ohm @ 500µA, 0V

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 10pF @ 25V

Tampok ng FET : Depletion Mode

Power Dissipation (Max) : 740mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-92-3

Pakete / Kaso : TO-226-3, TO-92-3 (TO-226AA)

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : LND15 , LND150N

Mga dokumento para sa LND150N3-G-P002

datasheets : LND150N3-G-P002.pdf

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