VP2110K1-G - MOSFET P-CH 100V 0.12A SOT23-3

Manufacturer Bilang Bahagi

VP2110K1-G

Internal Bilang Bahagi

ABC-VP2110K1-G

tagagawa

Microchip Technology

Maikling Paglalarawan

MOSFET P-CH 100V 0.12A SOT23-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1444499 Pieces

reference Presyo

~~USD 0.2266~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung VP2110K1-G sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa VP2110K1-G

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : VP2110K1-G

tagagawa : Microchip Technology

paglalarawan : MOSFET P-CH 100V 0.12A SOT23-3

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120mA (Tj)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 12 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 360mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : TO-236AB (SOT23)

Pakete / Kaso : TO-236-3, SC-59, SOT-23-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : VP2 , VP211

Mga dokumento para sa VP2110K1-G

datasheets : VP2110K1-G.pdf

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