IPC302N08N3X1SA1 - MOSFET N-CH 80V 1A SAWN ON FOIL

Manufacturer Bilang Bahagi

IPC302N08N3X1SA1

Internal Bilang Bahagi

ABC-IPC302N08N3X1SA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH 80V 1A SAWN ON FOIL

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

226975 Pieces

reference Presyo

~~USD 1.442075~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung IPC302N08N3X1SA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IPC302N08N3X1SA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IPC302N08N3X1SA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH 80V 1A SAWN ON FOIL

serye : OptiMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 80V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1A (Tj)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 270µA

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Input Capacitance (Ciss) (Max) @ Vds : -

Tampok ng FET : -

Power Dissipation (Max) : -

Temperatura ng pagpapatakbo : -

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : Sawn on foil

Pakete / Kaso : Die

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IPC30 , IPC302N0

Mga dokumento para sa IPC302N08N3X1SA1

datasheets : IPC302N08N3X1SA1.pdf

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