FQT1N80TF-WS - MOSFET N-CH 800V 0.2A SOT-223

Manufacturer Bilang Bahagi

FQT1N80TF-WS

Internal Bilang Bahagi

ABC-FQT1N80TF-WS

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET N-CH 800V 0.2A SOT-223

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1408057 Pieces

reference Presyo

~~USD 0.232465~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung FQT1N80TF-WS sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa FQT1N80TF-WS

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : FQT1N80TF-WS

tagagawa : ON Semiconductor

paglalarawan : MOSFET N-CH 800V 0.2A SOT-223

serye : QFET®

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 800V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 200mA (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 20 Ohm @ 100mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 7.2nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 195pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 2.1W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : SOT-223-3

Pakete / Kaso : TO-261-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : FQT1 , FQT1N8

Mga dokumento para sa FQT1N80TF-WS

datasheets : FQT1N80TF-WS.pdf

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