H7N1002LSTL-E - MOSFET N-CH 100V LDPAK

Manufacturer Bilang Bahagi

H7N1002LSTL-E

Internal Bilang Bahagi

ABC-H7N1002LSTL-E

tagagawa

Renesas Electronics America

Maikling Paglalarawan

MOSFET N-CH 100V LDPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

86944 Pieces

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung H7N1002LSTL-E sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa H7N1002LSTL-E

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : H7N1002LSTL-E

tagagawa : Renesas Electronics America

paglalarawan : MOSFET N-CH 100V LDPAK

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 75A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10 mOhm @ 37.5A, 10V

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : 155nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 9700pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 100W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : 4-LDPAK

Pakete / Kaso : SC-83

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : H7N1 , H7N100

Mga dokumento para sa H7N1002LSTL-E

datasheets : H7N1002LSTL-E.pdf

Kaugnay na mga produkto para sa H7N1002LSTL-E Renesas Electronics America

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