SSM6N15AFE,LM PDF Datasheet Download - MOSFET 2N-CH 30V 0.1A ES6

Mismong para sa SSM6N15AFE,LM

Bilang bahagi : SSM6N15AFE,LM

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET 2N-CH 30V 0.1A ES6

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100mA

Rds On (Max) @ Id, Vgs : 4 Ohm @ 10mA, 4V

Vgs (th) (Max) @ Id : 1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs : -

Input Capacitance (Ciss) (Max) @ Vds : 7.8pF @ 3V

Kapangyarihan - Max : 150mW

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : SOT-563, SOT-666

Package ng Tagabigay ng Device : ES6 (1.6x1.6)

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

SSM6N15AFE,LM

Internal Bilang Bahagi

ABC-SSM6N15AFE,LM

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET 2N-CH 30V 0.1A ES6

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

9918937 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SSM6N15AFE,LM sa stock para ibenta.

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SSM6N15AFE,LM datasheet

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Kaugnay na mga produkto para sa SSM6N15AFE,LM Toshiba Semiconductor and Storage