SIS778DN-T1-GE3 datasheet
Mismong para sa SIS778DN-T1-GE3
Bilang bahagi :
SIS778DN-T1-GE3
tagagawa :
Vishay Siliconix
paglalarawan :
MOSFET N-CH 30V 35A POWERPAK1212
serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
35A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1390pF @ 15V
Tampok ng FET :
Schottky Diode (Body)
Power Dissipation (Max) :
52W (Tc)
Temperatura ng pagpapatakbo :
-50°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® 1212-8
Pakete / Kaso :
PowerPAK® 1212-8
timbang :
-
kalagayan :
Bago at orihinal na
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
ABC-SIS778DN-T1-GE3
tagagawa
Maikling Paglalarawan
MOSFET N-CH 30V 35A POWERPAK1212
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
40846 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- ABC Semiconductor kung SIS778DN-T1-GE3 sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
- Paypal (Credit Card)
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