SIHU3N50DA-GE3 PDF Datasheet Download - MOSFET N-CHANNEL 500V 3A IPAK

Mismong para sa SIHU3N50DA-GE3

Bilang bahagi : SIHU3N50DA-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET N-CHANNEL 500V 3A IPAK

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 500V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.2 Ohm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 177pF @ 100V

Tampok ng FET : -

Power Dissipation (Max) : 69W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : IPAK (TO-251)

Pakete / Kaso : TO-251-3 Long Leads, IPak, TO-251AB

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

SIHU3N50DA-GE3

Internal Bilang Bahagi

ABC-SIHU3N50DA-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET N-CHANNEL 500V 3A IPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1664747 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SIHU3N50DA-GE3 sa stock para ibenta.

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SIHU3N50DA-GE3 datasheet

Mismong para sa SIHU3N50DA-GE3

Kaugnay na mga produkto para sa SIHU3N50DA-GE3 Vishay Siliconix