SI5908DC-T1-E3 PDF Datasheet Download - MOSFET 2N-CH 20V 4.4A 1206-8

Mismong para sa SI5908DC-T1-E3

Bilang bahagi : SI5908DC-T1-E3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET 2N-CH 20V 4.4A 1206-8

serye : TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.4A

Rds On (Max) @ Id, Vgs : 40 mOhm @ 4.4A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : -

Kapangyarihan - Max : 1.1W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-SMD, Flat Lead

Package ng Tagabigay ng Device : 1206-8 ChipFET™

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

SI5908DC-T1-E3

Internal Bilang Bahagi

ABC-SI5908DC-T1-E3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET 2N-CH 20V 4.4A 1206-8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

997934 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung SI5908DC-T1-E3 sa stock para ibenta.

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SI5908DC-T1-E3 datasheet

Mismong para sa SI5908DC-T1-E3

Kaugnay na mga produkto para sa SI5908DC-T1-E3 Vishay Siliconix