SI5513DC-T1-GE3 datasheet
Mismong para sa SI5513DC-T1-GE3
Bilang bahagi :
SI5513DC-T1-GE3
tagagawa :
Vishay Siliconix
paglalarawan :
MOSFET N/P-CH 20V 3.1A 1206-8
serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.1A, 2.1A
Rds On (Max) @ Id, Vgs :
75 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
1.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SMD, Flat Lead
Package ng Tagabigay ng Device :
1206-8 ChipFET™
timbang :
-
kalagayan :
Bago at orihinal na
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
ABC-SI5513DC-T1-GE3
tagagawa
Maikling Paglalarawan
MOSFET N/P-CH 20V 3.1A 1206-8
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
54041 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- ABC Semiconductor kung SI5513DC-T1-GE3 sa stock para ibenta.
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- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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