SI3585CDV-T1-GE3 datasheet
Mismong para sa SI3585CDV-T1-GE3
Bilang bahagi :
SI3585CDV-T1-GE3
tagagawa :
Vishay Siliconix
paglalarawan :
MOSFET N/P-CH 20V 3.9A 6TSOP
serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.9A, 2.1A
Rds On (Max) @ Id, Vgs :
58 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 10V
Kapangyarihan - Max :
1.4W, 1.3W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
Package ng Tagabigay ng Device :
6-TSOP
timbang :
-
kalagayan :
Bago at orihinal na
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
ABC-SI3585CDV-T1-GE3
tagagawa
Maikling Paglalarawan
MOSFET N/P-CH 20V 3.9A 6TSOP
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
3022383 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- ABC Semiconductor kung SI3585CDV-T1-GE3 sa stock para ibenta.
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