SI1051X-T1-E3 PDF Datasheet Download - MOSFET P-CH 8V 1.2A SC89-6

Mismong para sa SI1051X-T1-E3

Bilang bahagi : SI1051X-T1-E3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET P-CH 8V 1.2A SC89-6

serye : TrenchFET®

Katayuan ng Bahagi : Obsolete

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 8V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : -

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 122 mOhm @ 1.2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 9.45nC @ 5V

Vgs (Max) : ±5V

Input Capacitance (Ciss) (Max) @ Vds : 560pF @ 4V

Tampok ng FET : -

Power Dissipation (Max) : 236mW (Ta)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : SC-89-6

Pakete / Kaso : SOT-563, SOT-666

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

SI1051X-T1-E3

Internal Bilang Bahagi

ABC-SI1051X-T1-E3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET P-CH 8V 1.2A SC89-6

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

77931 piraso

reference Presyo

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Ang aming Presyo

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SI1051X-T1-E3 datasheet

Mismong para sa SI1051X-T1-E3

Kaugnay na mga produkto para sa SI1051X-T1-E3 Vishay Siliconix