GA10SICP12-263 PDF Datasheet Download - TRANS SJT 1200V 25A TO263-7

Mismong para sa GA10SICP12-263

Bilang bahagi : GA10SICP12-263

tagagawa : GeneSiC Semiconductor

paglalarawan : TRANS SJT 1200V 25A TO263-7

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : -

Teknolohiya : SiC (Silicon Carbide Junction Transistor)

Drain sa Source Voltage (Vdss) : 1200V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 25A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : 100 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Input Capacitance (Ciss) (Max) @ Vds : 1403pF @ 800V

Tampok ng FET : -

Power Dissipation (Max) : 170W (Tc)

Temperatura ng pagpapatakbo : 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : D2PAK (7-Lead)

Pakete / Kaso : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

GA10SICP12-263

Internal Bilang Bahagi

ABC-GA10SICP12-263

tagagawa

GeneSiC Semiconductor

Maikling Paglalarawan

TRANS SJT 1200V 25A TO263-7

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

43537 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung GA10SICP12-263 sa stock para ibenta.

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GA10SICP12-263 datasheet

Mismong para sa GA10SICP12-263

Kaugnay na mga produkto para sa GA10SICP12-263 GeneSiC Semiconductor