APTM120H29FG PDF Datasheet Download - MOSFET 4N-CH 1200V 34A SP6

Mismong para sa APTM120H29FG

Bilang bahagi : APTM120H29FG

tagagawa : Microsemi Corporation

paglalarawan : MOSFET 4N-CH 1200V 34A SP6

serye : POWER MOS 7®

Katayuan ng Bahagi : Active

Uri ng FET : 4 N-Channel (H-Bridge)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 1200V (1.2kV)

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 34A

Rds On (Max) @ Id, Vgs : 348 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs : 374nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 10300pF @ 25V

Kapangyarihan - Max : 780W

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Chassis Mount

Pakete / Kaso : SP6

Package ng Tagabigay ng Device : SP6

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

APTM120H29FG

Internal Bilang Bahagi

ABC-APTM120H29FG

tagagawa

Microsemi Corporation

Maikling Paglalarawan

MOSFET 4N-CH 1200V 34A SP6

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

59334 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung APTM120H29FG sa stock para ibenta.

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APTM120H29FG datasheet

Mismong para sa APTM120H29FG

Kaugnay na mga produkto para sa APTM120H29FG Microsemi Corporation