APTM100H80FT1G PDF Datasheet Download - MOSFET 4N-CH 1000V 11A SP1

Mismong para sa APTM100H80FT1G

Bilang bahagi : APTM100H80FT1G

tagagawa : Microsemi Corporation

paglalarawan : MOSFET 4N-CH 1000V 11A SP1

serye : -

Katayuan ng Bahagi : Obsolete

Uri ng FET : 4 N-Channel (H-Bridge)

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 1000V (1kV)

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11A

Rds On (Max) @ Id, Vgs : 960 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 3876pF @ 25V

Kapangyarihan - Max : 208W

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Chassis Mount

Pakete / Kaso : SP1

Package ng Tagabigay ng Device : SP1

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

APTM100H80FT1G

Internal Bilang Bahagi

ABC-APTM100H80FT1G

tagagawa

Microsemi Corporation

Maikling Paglalarawan

MOSFET 4N-CH 1000V 11A SP1

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

50336 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

ABC Semiconductor kung APTM100H80FT1G sa stock para ibenta.

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APTM100H80FT1G datasheet

Mismong para sa APTM100H80FT1G

Kaugnay na mga produkto para sa APTM100H80FT1G Microsemi Corporation